| 摘要 |
PROBLEM TO BE SOLVED: To provide an intermediate transfer drum developed based on knowledge obtained by the measurement of microscopic electric properties of the intermediate transfer drum, and free from uneven density and void. SOLUTION: The intermediate transfer drum 100 having a semiconductive layer with conductive materials dispersed in a resin base on the surface 100A thereof is constituted so that a plurality of isolated island-like discharge areas of≥5 mm<SP>2</SP>never exist on the surface of the intermediate transfer drum at the same time when a vertical electrical field not causing the dielectric breakdown of the semiconductive layer is applied to the intermediate transfer drum from the outside. COPYRIGHT: (C)2008,JPO&INPIT
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