| 摘要 |
A method and apparatus for fabricating a semiconductor device are provided. First plasma ions are introduced into a process chamber including a semiconductor substrate to amorphize the semiconductor substrate. An inert gas is introduced into the process chamber to purge the first plasma ions. Second plasma ions are introduced into the process chamber to remove impurities formed on the semiconductor substrate. The second plasma ions can be hydrogen ions. Since a PAI process and a cleaning process are performed in a single chamber, process efficiency improves. In addition, a cleaning process using hydrogen ions can reduce damage on the surface of the semiconductor substrate.
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