| 摘要 |
A GaN type light emitting diode device is provided to flow the uniform current through an entire chip by improving a current spreading effect of a transparent conductive film, thereby maximizing the light emitting efficiency. A GaN type light emitting diode device comprises a substrate(110), an n-type GaN layer(120) formed on the substrate, an active layer(130) formed on a part of the n-type GaN layer, a p-type GaN layer(140) formed on the active layer, a transparent conductive film(150) formed on the p-type GaN layer having a plurality of engraved irregularities(150a) apart from each other, a p-type electrode(170) formed on the transparent conductive film, and an n-type electrode(160) formed on the n-type GaN layer without the active layer.
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