FABRICATING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FABRICATED BY THE SAME

摘要

A method for fabricating a semiconductor integrated circuit device is provided to prevent moisture or external ions from penetrating the inside of a first interlayer dielectric by forming a contact in the first interlayer dielectric covering NMOS and PMOS transistors and by dehydrogenating the first interlayer dielectric. An NMOS transistor(100) is formed on a semiconductor substrate(10). A first interlayer dielectric(320) with predetermined stress is formed on the NMOS transistor. A contact(328) connected to the NMOS transistor is formed in the first interlayer dielectric. The first interlayer dielectric is dehydrogenated to vary the stress. A capping layer is formed on the first interlayer dielectric by an in-situ method to prevent moisture or external ions from penetrating the first interlayer dielectric.