| 摘要 |
<p>A photoresist composition, and a method for forming a pattern by using the composition are provided to obtain satisfactory sensitivity, resolution, residual film rate and coating property and to improve the light transmissivity at short wavelength of 248 nm or less, thereby enhancing profile and the depth of focus by enhancing the light transmissivity at a short wavelength of 248 nm (KrF) or less. A photoresist composition comprises 100 parts by weight of a novolac base resin; a sensitizer; and 5-50 parts by weight a resin of low absorbance whose absorbance is lower than the absorbance of the novolac base resin in at least one wavelength of 248 nm, 193 nm and 157 nm. Preferably the resin of low absorbance is a resin comprising at least one repeating unit represented by the formulas 1 and 2, wherein R1 is a c1-C15 linear, branched or cyclic alkyl or alkoxy group, an ester group, an ether group, a carbonyl group, an acetal group or an alcohol group; R2 is a H or a C1-C5 alkyl group; and R3 is a C1-C5 alkyl group.</p> |
