THIN FILM TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to minimize deviation of thin film transistor property due to membranous change of a protective layer by controlling the cause inducing the deviation of current voltage property and threshold voltage at each entity. CONSTITUTION: A gate electrode(11) is formed on a selection area of a substrate(10). A gate insulating layer(12) is formed on the entire surface of the substrate in order to cover the gate electrode. An oxide semiconductor layer(13) is formed on a selection area of the gate insulating layer. The oxide semiconductor layer forms a channel by applying gate voltage to the gate electrode. A stopper layer is arranged on the channel of the oxide semiconductor layer. A first protective film(16) is formed on a source/drain electrode(15). A second protective film(17) is formed on the first protective film.