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发明名称
半导体之热处理方法
摘要
本发明系关于半导体之热处理方法,可对半导体或半导体元件进行短时间热处理,以得到稳定的高改质效果为目的。本发明系设置碳或含碳层作为光吸收层,将直接连接于此光吸收层或隔着厚度5nm~100μm之传热层连接于此光吸收层的被热处理层之半导体材料或半导体元件进行加热处理的方法,所使用的光源为波长600nm~2μm之半导体雷射光,此半导体雷射光连续地照射扫瞄被热处理材料之表面。容易增大光源之输出而实现高速且低消费能量的加热处理。
申请公布号
TW200807563
申请公布日期
2008.02.01
申请号
TW096121979
申请日期
2007.06.20
申请人
高科技 系统股份有限公司
发明人
佐野直树;鲛岛俊之
分类号
H01L21/324(2006.01);H01L21/22(2006.01)
主分类号
H01L21/324(2006.01)
代理机构
代理人
何金涂;何秋远
主权项
地址
日本
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