发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of performing efficient reading and writing and high-speed operation. SOLUTION: The semiconductor device includes memory cells; word lines connected to the memory cells; bit lines connected to the memory cells; sense amplifiers connected to the bit lines, a reset circuit which resets the bit line to a reset potential of a next read cycle, wherein the reset potential determined based on a value of data read from the memory cells by the sense amplifiers in a previous read cycle is made as the reset potential of the next read cycle; pairs of data buses connected via data input/output circuits to the sense amplifiers; and a control circuit which sets the pairs of data buses to a floating state. When data includes a bit to be masked and inhibited from being written into a corresponding one of the memory cells, the control circuit sets a corresponding one of the pairs of data buses to the floating state. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008021410(A) 申请公布日期 2008.01.31
申请号 JP20070262338 申请日期 2007.10.05
申请人 FUJITSU LTD 发明人 TAKEMAE YOSHIHIRO;TAGUCHI MASAO;NAKANO MASAO;MOCHIZUKI HIROHIKO;TOMITA HIROYOSHI;MATSUZAKI YASURO;AIKAWA TADAO
分类号 G11C11/4091;G11C11/4096 主分类号 G11C11/4091
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