发明名称 THIN FILM MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a thin film manufacturing apparatus capable of supplying the high power of the high frequency range while suppressing the cost of the apparatus, enhancing the film deposition working efficiency while reliably forming the thin film of the excellent film thickness distribution, and sufficiently ensuring the installation space of an impedance matching box while suppressing the thickness of a shield body. SOLUTION: The thin film manufacturing apparatus for depositing a thin film on a surface of a flexible substrate 1 by stopping the flexible substrate 1 to be conveyed in a vacuum chamber 13 in a film deposition chamber 5 in a vacuum state, and applying the voltage between a voltage applying electrode 21 and a grounding electrode 22 comprises a supporting frame 54 which is formed in a frame shape and insulates and fixes the voltage applying electrode 21, a metal diaphragm body 58 fixed to a face opposite to the voltage applying electrode 21 of the supporting frame 54, a power supply structural body 60 which is provided inside the supporting frame 54 to supply the power to the voltage applying electrode 21, a first grounding box 80 to be electrically connected to an inner surface of a wall body 15, and a second grounding body 90 to be electrically connected to the metal diaphragm body 58. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008019463(A) 申请公布日期 2008.01.31
申请号 JP20060190396 申请日期 2006.07.11
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 SHIMIZU HITOSHI;OUCHI TAKASHI;GEKITO MASAKAZU;SHIMOZAWA SHIN
分类号 C23C16/505;C23C16/54 主分类号 C23C16/505
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