| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor laser efficiently dissipating heat generated from semiconductor laser, and reducing internal stress generated upon fusion bonding the semiconductor laser element to a heat sink. SOLUTION: The semiconductor laser element is provided on a first conductive semiconductor substrate 1 with at least a first conductive clad layer 2, an active layer 3, a second conductive clad layer 4, and an electrode layer 7 with an Au plating layer 8 formed on the electrode layer 7, a non-alloyed electrode layer 9 which is not alloyed with solder formed on the Au plating layer 8, and an alloyed electrode layer 10. When the upper surface of the alloyed electrode layer 10 is fusion-bonded to the heat sink employing alloyed solder in the semiconductor laser element, the non-alloyed electrode layer 9 will not be molten but only the alloyed electrode layer 10 is molten into the alloyed solder and is bonded after being alloyed. The Au plating layer 8 will not be molten into the alloyed solder, thereby preventing the composition deviation of the alloyed solder and the thinning of thickness of the Au plating layer 8 due to melting. COPYRIGHT: (C)2008,JPO&INPIT
|
