| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of diffusing platinum in a semiconductor device. SOLUTION: After a platinum film is deposited on a surface of a silicon substrate, a low temperature heat treatment process are activated at 300-500°C to form a platinum silicide (PtSi) film. Thereafter, the Pt film is removed, and Pt diffusion is activated by the PtSi film at a high temperature in a range of 800-1,000°C. The Pt film is removed after the low temperature heat treatment, whereby a diffusion temperature can be raised and high-speed switching characteristics can be improved. As a Pt concentration to an oxide film or the like on the surface of the silicon substrate can be reduced compared with a conventional method, a good withstand voltage yield ratio can be achieved with good repeatability. COPYRIGHT: (C)2008,JPO&INPIT
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