| 摘要 |
<P>PROBLEM TO BE SOLVED: To further improve light extraction efficiency of a nitride semiconductor light emitting diode device that includes a stripe shaped surface roughness structure. <P>SOLUTION: The nitride semiconductor light emitting diode device 10 has a lamination structure that comprises a transparent substrate 11A and a plurality of nitride semiconductor layers 11B, 12A, 12B, 12C. The plurality of nitride semiconductor layers 12A, 12B, 12C that constitute a pn-junction light emitting element structure are included in regions of the lamination structure excluding the transparent substrate 11A. The lamination structure includes two pairs of base layer/embedding layer (11A/11B), (11B/12A) that comprise a base layer formed with a stripe-shaped surface roughness structure on one surface thereof; and an embedding layer that includes the surface roughness structure embedded therein, covers one surface thereof, and has a refraction rate different from that of the base layer. The stripe directions of the stripe-shape surface roughness structures formed on the base layer are perpendicular to each other. <P>COPYRIGHT: (C)2008,JPO&INPIT |
