| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance long wavelength semiconductor light-emitting device where degradation in crystallinity is prevented. SOLUTION: On a semiconductor substrate 1, an active layer 3 having a strained quantum well layer 2 and a clad layer 4 which confines light and a carrier are formed. In a semiconductor light-emitting device oscillating wavelength band of 1.3μm, the strained quantum well layer 2 contains In and N, where the N composition occupying in the group V element is 0-1%, the In composition occupying in the group III element is larger than 30%, and the distortion quantity of the strained quantum well layer 2 relative to the semiconductor substrate 1 and the cladding layer 4 exceeds 2%. COPYRIGHT: (C)2008,JPO&INPIT
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