发明名称 Silicon Monoxide Vapor Deposition Material, Silicon Powder as Raw Material, and Method for Producing Silicon Monoxide Vapor Deposition Material
摘要 A silicon monoxide vapor deposition material is characterized in that a hydrogen gas content therein is not more than 50 ppm, and splash generation can be suppressed when the silicon monoxide is deposited on a substrate base. A silicon monoxide vapor-deposited film having the excellent transparency and barrier properties can be formed. The silicon monoxide vapor deposition material whose hydrogen gas content is not more than 50 ppm can be formed at low costs by performing a degassing process for lowering the hydrogen gas content of a silicon powder as a raw material for the silicon monoxide vapor deposition material to 10 ppm or less. Therefore, the method for producing the silicon monoxide vapor deposition of the present invention can be applied as the method for producing the vapor deposition materials for the packaging materials having the transparency and barrier properties for foods, medical products, medicinal products, and the like.
申请公布号 US2008025897(A1) 申请公布日期 2008.01.31
申请号 US20050661393 申请日期 2005.08.09
申请人 NISHIOKA KAZUO;KIZAKI SHINGO 发明人 NISHIOKA KAZUO;KIZAKI SHINGO
分类号 C01B33/113 主分类号 C01B33/113
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