发明名称 PLASMA SURFACE TREATMENT METHOD, QUARTZ MEMBER, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 A plasma surface treatment method for performing a surface treatment on a quartz member used under a plasma-exposed environment by using a plasma having an ion energy greater than about 5.3 eV. The plasma has, near a surface of the quartz member, an electron temperature higher than or equal to about 2 eV. Further, in a plasma processing apparatus for generating a plasma by introducing a microwave into a processing chamber through a planar antenna having a plurality of slots, the surface treatment is carried out for about 30-300 seconds by using a plasma of a processing gas containing Ar gas and N<SUB>2 </SUB>gas under conditions of a processing pressure lower than or equal to about 15 Pa and a microwave power higher than or equal to about 0.9 W/cm<SUP>2</SUP>, the surface treatment being repeated 25 to 2000 times.
申请公布号 US2008025899(A1) 申请公布日期 2008.01.31
申请号 US20070829600 申请日期 2007.07.27
申请人 TOKYO ELECTRON LIMITED 发明人 TAKAHASHI TETSURO
分类号 C01B33/12;C03C15/00;C23C16/00;H01L21/306;H05H1/46 主分类号 C01B33/12
代理机构 代理人
主权项
地址