| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid for a metal being proper to a chemical mechanical flattening, particularly the flattening of a metal wiring in a manufacture for a semiconductor device, and being capable of inhibiting the dishing of a body to be polished even when the body to be polished is polished at a practical polishing speed. SOLUTION: The polishing liquid for a metal contains grains having an aminocarboxylic acid having a substitutional group expressed by formula (1): -SiR<SB>m</SB>(OH)<SB>3-m</SB>in a molecule, an oxidizing agent and a silanol group on surfaces. R represents a hydrogen atom, an alkyl group or an aryl group, and m is an integer of 0 to 3 in the formula. COPYRIGHT: (C)2008,JPO&INPIT |
