| 摘要 |
PROBLEM TO BE SOLVED: To permit obtaining a magnetoresistive element and a magnetic head which are capable of forming nano contact more minutely with higher stability and higher sensitivity. SOLUTION: The magneto resistance element has a first magnetic layer 2, a second magnetic layer 8, and a first insulating layer 4 provided between the first magnetic layer and the second magnetic layer, and having a linear first gap 5 penetrating from the first magnetic layer side to the second magnetic layer side; and a second insulating layer 6 provided between the first insulating layer and the second magnetic layer, and having a linear second gap 7 provided between the first insulating layer and the second magnetic layer, so as to penetrate from the first insulating layer side to the second magnetic layer side so as to be intersected with the first gap. The first and the second magnetic layers are electrically contacted with each other in the intersecting region of the first gap and the second gap. COPYRIGHT: (C)2008,JPO&INPIT
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