发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory where relief judgment is carried out based on the result of inspection performed in two or more voltage conditions based on the assumption that power is cut off whenever the voltage conditions are changed. SOLUTION: In the semiconductor memory 100, a nonvolatile element part 4 stores information required for relieving a main memory cell in a nonvolatile element as stored information. When new relief information S3 is output from a redundant relieving part, a relief judgment part 5 judges whether to relieve the main memory cell, based on stored information S4 stored in the nonvolatile element part 4 and the new relief information S3. The nonvolatile element part 4 replaces the stored information based on a judging result of the relief judgment part 5. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008021376(A) 申请公布日期 2008.01.31
申请号 JP20060193173 申请日期 2006.07.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KUROZUMI TOMOHIRO;AKAMATSU HIRONORI;SATOMI KATSUJI
分类号 G11C29/04;G01R31/28;G11C29/44 主分类号 G11C29/04
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