Back illuminated image sensor with an uniform substrate temperature

摘要

The sensor has a semiconductor material substrate (14) with N and P-type regions (34, 38), on a side of its front surface (15), corresponding to power terminals of MOS transistors (M7, M8) of peripheral circuits with a significant heat dissipation. A stack of insulating layers (70) covers the surface, and a thermally conductive silicon reinforcement (78) covers the stack on the side opposite to the substrate. Thermally conductive vias (76) connects the substrate to the reinforcement, where the sensor is made in monolithic form and illuminated on a side of a rear surface (16) of the substrate. An independent claim is also included for a method for manufacturing an image sensor.