发明名称 METHOD OF MANUFACTURING CYLINDER TYPE CAPACITOR PREVENTED STORAGENODE LEANING
摘要 A method of manufacturing a cylinder type capacitor preventing a storage node leaning is provided to prevent bridge phenomenon between storage nodes by forming a sidewall on an external wall of an upper portion of the storage node. An interlayer dielectric(22) is formed on an upper portion of a substrate(21). A storage node contact hole passing through the interlayer dielectric is formed. A storage node contact plug(23) gap-filled in the storage node contact hole is formed. An etch stop layer(24) is formed on the interlayer dielectric on which the storage node contact plug is gap-filled. A mold layer(25) is formed on an upper portion of the etch stop layer. A photoresist is applied on the mold layer. The mold layer is patterned by exposure and development to form a photoresist pattern(26). The mold layer is etched by using the photoresist pattern as an etching barrier to open plural open regions(27). The etch stop layer under the open region is etched to open an upper portion of the storage node contact plug.
申请公布号 KR100799152(B1) 申请公布日期 2008.01.29
申请号 KR20060097312 申请日期 2006.10.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 ROH, JAE SUNG;LEE, KEE JEUNG;SONG, HAN SANG;YEOM, SEUNG JIN;KIL, DEOK SIN;KIM, YOUNG DAE;KIM, JIN HYOCK
分类号 H01L27/108;H01L27/04 主分类号 H01L27/108
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