发明名称 |
Semiconductor device and method for production thereof |
摘要 |
The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.
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申请公布号 |
US7323390(B2) |
申请公布日期 |
2008.01.29 |
申请号 |
US20040496531 |
申请日期 |
2004.05.24 |
申请人 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/INSTITUT FUR INNOVATIVE MIKROELEKTRONIK |
发明人 |
HEINEMANN BERND;KNOLL DIETER;EHWALD KARL-ERNST;RUECKER HOLGER |
分类号 |
H01L21/31;H01L21/331;H01L29/08;H01L29/732;H01L29/737 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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