| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can improve characteristics by forming a deep n-type diffusion layer on a rear surface without using an expensive high energy ion implanting apparatus, while using P and As as a dopant for a usual shallow diffusion layer after an MOS gate structure containing an aluminum-based electrode film is formed on a front surface. SOLUTION: In the manufacturing method of a semiconductor device, the MOS gate structure coated with an aluminum-based metal electrode is formed on the front surface of an n-type semiconductor substrate and the rear surface is polished; and then, an n-type field stop layer and a p-type collector layer having impurity concentration higher than that of the n-type semiconductor substrate are formed in this order on the rear surface. In this method, the field stop layer is formed by repeatedly laminating an n-type semiconductor silicon layer formed through a step of depositing a doped amorphous silicon layer employing phosphorus or arsenic as a dopant, and a step of applying heat treatment to the doped amorphous silicon layer. COPYRIGHT: (C)2008,JPO&INPIT
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