| 摘要 |
A solid state image sensing device comprises an MOS transistor T 2 that has a source thereof connected to a drain of an MOS transistor T 1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T 5 that has a gate thereof connected to the drain of the MOS transistor T 1 ; and a condenser that has a source thereof connected to the MOS transistor T 5 . When a linear conversion operation is performed in an entire refuge of luminance, the MOS transistor T 2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS Transistor T 2 works in a sub-threshold region.
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