发明名称 |
PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY |
摘要 |
Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.
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申请公布号 |
WO0025178(A2) |
申请公布日期 |
2000.05.04 |
申请号 |
WO1999US25106 |
申请日期 |
1999.10.26 |
申请人 |
E.I. DU PONT DE NEMOURS AND COMPANY;SCHADT, FRANK, LEONARD, III;FRYD, MICHAEL;PERIYASAMY, MOOKKAN |
发明人 |
SCHADT, FRANK, LEONARD, III;FRYD, MICHAEL;PERIYASAMY, MOOKKAN |
分类号 |
C08F290/04;G03F7/004;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03F7/ |
主分类号 |
C08F290/04 |
代理机构 |
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