发明名称 PHOTOMASK, EXPOSURE DEVICE AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To improve use efficiency of light in entire lithography by efficiently utilizing excessive spectra generating at shorter wavelengths than i-line without abandoning. <P>SOLUTION: A material having a band gap wavelength of near 365 nm between the conduction band and the valence band is disposed in a path from a light source to a substrate so that the material receives rays at wavelengths shorter than the band gap wavelength in the light emitting from the light source, exciting electrons in the valence band to one of energy levels in the conduction band and inducing emission of light at the band gap wavelength from the conduction band by the excited electrons. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008015098(A) 申请公布日期 2008.01.24
申请号 JP20060184587 申请日期 2006.07.04
申请人 JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 OTSU GENICHI;YATSUI TAKASHI
分类号 G03F1/54;G03F1/68;G03F7/20;H01J61/44;H01L21/027 主分类号 G03F1/54
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