Stacked microelectronic layer and module with three-axis channel T-connects

摘要

A method for interconnecting stacked layers containing integrated circuit die and a device built from the method is disclosed. The stacked layers are bonded together to form a module whereby individual I/O pads of the integrated circuit die are rerouted to at least one edge of the module. The rerouted leads terminate at the edge. Channels are formed in a surface of the module or on the surface of a layer whereby the rerouted leads are disposed within the channel. The entire surface of the edge or layer is metalized and a predetermined portion of the metalization removed such that the rerouted leads within each channel are electrically connected to each other.