发明名称 |
Semiconductor device employing buried insulating layer and method of fabricating the same |
摘要 |
A semiconductor device employs an asymmetrical buried insulating layer, and a method of fabricating the same. The semiconductor device includes a lower semiconductor substrate. An upper silicon pattern is located on the lower semiconductor substrate. The upper silicon pattern includes a channel region, and a source region and a drain region spaced apart from each other by the channel region. A gate electrode is electrically insulated from the upper silicon pattern and intersects over the channel region. A bit line and a cell capacitor are electrically connected to the source region and the drain region, respectively. A buried insulating layer is interposed between the drain region and the lower semiconductor substrate. The buried insulating layer has an extension portion partially interposed between the channel region and the lower semiconductor substrate.
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申请公布号 |
US7321144(B2) |
申请公布日期 |
2008.01.22 |
申请号 |
US20040011258 |
申请日期 |
2004.12.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;CHOE JEONG-DONG;YEO KYOUNG-HWAN |
分类号 |
H01L27/108;H01L21/336;H01L21/8238;H01L21/8242;H01L29/00;H01L29/06;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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