| 摘要 |
Provided are a thin-film transistor formed by connecting polysilicon layers having different conductivity types with each other which prevents occurrence of inconvenience resulting from diffusion of impurities and a method of fabricating the same. A drain ( 6 ), a channel ( 7 ) and a source ( 8 ) are integrally formed on a surface of a second oxide film ( 4 ) by polysilicon. The drain ( 6 ) is formed to be connected with a pad layer ( 3 ) (second polycrystalline semiconductor layer) through a contact hole ( 5 ) which is formed to reach an upper surface of the pad layer ( 3 ). The pad layer ( 3 ) positioned on a bottom portion of the contact hole ( 5 ) (opening) is provided with a boron implantation region BR.
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