| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for reducing the occurrence of metal defect, in the formation of a thick metal layer of 1μm or more, such as an inductor in a semiconductor device. <P>SOLUTION: A first portion 115a having 1/2 of the thickness of the metal layer, such as thick aluminum, is deposited by spattering on a dielectric layer. The first portion has compressive stress or tensile stress. A stress-compensating layer 120 such as a TiN layer is then deposited thereon. The stress-compensating layer is spattered in an ambient atmosphere containing nitrogen gas so as to have the stress reverse to the stress in the first portion. Subsequently, a second portion 115a with 1/2 of the thickness of the metal layer is deposited using the same method as the first portion thereon. After that, patterning is carried out to form the inductor 110. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
