发明名称 ACTIVE MATRIX TFT ARRAY SUBSTRATE, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide an active matrix TFT array substrate excellent in reliability and productivity. SOLUTION: This active matrix TFT array substrate is provided with a gate electrode 2 and a gate wiring 4 each made of a first metallic film on a transparent insulating substrate 1, a gate insulating film 5 for covering the gate electrode 2 and the gate wiring 4, a semiconductor layer formed on the gate insulating film 5, a source electrode 8b and a drain electrode 8a formed on the semiconductor layer, and a pixel electrode 8 made of a transparent conductive film. In this array substrate, at least any one of the source electrode 8b and the drain electrode 8a is made of the transparent conductive film 8, and a second metallic film 9 is provided thereon. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008010440(A) 申请公布日期 2008.01.17
申请号 JP20060176020 申请日期 2006.06.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 HARADA KAZUYUKI;ISHIGA NOBUAKI;INOUE KAZUNORI
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L21/3205;H01L21/336;H01L23/52 主分类号 H01L29/786
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