| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory with a single gate realizing the purpose of reducing current consumption and its operating method. SOLUTION: The nonvolatile memory has a transistor and a capacitive structure embedded in a semiconductor base. The transistor includes a first conductive gate, a first dielectric layer and a plurality of first ion-doped regions. The capacitive structure includes a second conductive gate, a second dielectric layer, and a second ion-doped region. The first and second conductive gates are electrically connected to form a single floating gate serving as a memory cell. The memory cell with a single gate performs operation such as writing, related erasure, reading or the like by reverse biasing. In addition, when operation of an isolated well region takes place, an inverted layer is generated by applying positive/negative voltage to a drain electrode, a gate electrode, and a silicon base or a well region, to have absolute voltage dropped and to reduce an area of a booster circuit. COPYRIGHT: (C)2008,JPO&INPIT
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