| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for growing a sapphire single crystal, with which the life of a crucible having a double structure can be prolonged by heating the crucible indirectly; and to provide a method for growing the sapphire single crystal, by which the sapphire single crystal free of an inclusion originating in iridium can be produced while reducing the producing cost of the sapphire single crystal. SOLUTION: The apparatus for producing the sapphire single crystal is equipped with: crucibles 73, 76 provided inside a heating chamber 60; heat-insulating tubes 63, 64 provided at upper parts of the crucibles 73, 76; a heating coil arranged at the outer periphery of the heating chamber 60; and a high frequency power source for supplying a high frequency current to the heating coil. The sapphire single crystal is grown by bringing a seed crystal into contact with a sapphire melt 77 obtained by indirectly heating the crucible 76 and then pulling the seed crystal while rotating it in an inert gas atmosphere. The crucible is formed to have a double structure comprising the crucible 76 arranged on inner side and made of molybdenum or tungsten and the crucible 73 which is arranged on the outside of the crucible 76 at such an interval that the crucible 73 is not brought into contact with the crucible 76 but the crucible 73 comes close to the crucible 76 and which is made of iridium. COPYRIGHT: (C)2008,JPO&INPIT
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