| 摘要 |
The semiconductor device comprises a plurality of MOS transistors 12 each including a gate electrode 20 formed over a semiconductor substrate 10 with a gate insulating film 18 formed therebetween, and a source diffused layer 28 and a drain diffused layer 34 of a second conductions type arranged with a channel region 36 of a first conduction type therebetween, the source diffused layers 28 and the drain diffused layers 34 of said plural MIS transistors 12 being arranged side by side in the same direction, a pocket region of the first conduction type being formed selectively between the source diffused layer 28 and the channel region 36 of each of the plural MIS transistors 12 , and a pocket impurity-not-implanted region being formed between the drain diffused layer 34 and the channel region 36 of each of the plural MIS transistors 12.
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