| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a high-performance MIS field-effect transistor provided with a low-resistance junction interface and suppressing junction leak, and to provide its manufacturing method. SOLUTION: The semiconductor device has the field-effect transistor that has a first-conductivity type first semiconductor region 100 formed with a channel region, gate electrodes 102, 103 formed via a gate insulating film 101, an Si<SB>X</SB>Ge<SB>1-X</SB>layer 106 formed on both sides of the channel region, a second-conductivity type second semiconductor region 108 formed on the Si<SB>X</SB>Ge<SB>1-X</SB>layer 106 and with an impurity concentration more than 10<SP>21</SP>atoms/cm<SP>3</SP>and less than 10<SP>22</SP>atoms/cm<SP>3</SP>, and a silicide layer 110 that includes Ni (nickel) and is formed on the second semiconductor region. Its manufacturing method is also provided. COPYRIGHT: (C)2008,JPO&INPIT
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