| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode (LED) with improved luminance utilizing advantages of a silicon carbide substrate and light emitting performance of indium gallium nitride. <P>SOLUTION: A vertical geometry light emitting diode includes a conductive silicon carbide substrate 11, an InGaN quantum well 12, a conductive buffer layer 13 between the substrate and the quantum well, undoped gallium nitride layers 14, 15 on respective surfaces of the quantum well, a doped gallium nitride layer 20 between the buffer layer and the undoped gallium nitride layer, an undoped aluminum gallium nitride layer 21 on the surface of the undoped gallium nitride layer on the quantum well, the undoped gallium nitride layer on the opposite side of the substrate and the buffer layer, a doped aluminum gallium nitride layer 22 on the undoped aluminum gallium nitride layer, and Ohmic contacts 16, 17 in a vertical geometry orientation. <P>COPYRIGHT: (C)2008,JPO&INPIT |
