| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To carry out surface reformation to various materials to be processed such as a semiconductor material, using a super-short pulse laser such as a femtosecond laser. <P>SOLUTION: A reformed region comprising an amorphous region (A) and/or a distorted region (B) is formed on the front surface (arrow S) of a material to be processed, by irradiating the material to be processed with a super-short pulse laser beam. The pulse width of the super-short pulse laser beam is set to be equal to or more than 1 fs, and equal to or less than 10 ps. A reformed region can be periodically formed by interference exposure. Further, the distortion of the distorted region can be reduced by annealing after pulse laser irradiation. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
