| 摘要 |
A method for fabricating a semiconductor device is provided to form a stable lower electrode contact plug by effectively removing a nitride layer in forming a hard mask nitride layer and a lower electrode contact hole spacer when a lower electrode contact hole is formed on an interlayer dielectric. An interlayer dielectric(13) is formed on a substrate(11). A first insulation layer for a hard mask is formed on the interlayer dielectric. The interlayer dielectric is etched to form an open part by using the first insulation layer as an etch barrier. A second insulation layer for a spacer is formed on the resultant structure. The first and the second insulation layers on the substrate except the open part are rapidly etched as compared with the second insulation layer on the bottom surface of the open part so that a spacer is formed on the inner sidewall of the opening part. A lower electrode contact plug(19) is formed in the open part. The first and the second insulation layers can be nitride layers. The interlayer dielectric can be an oxide layer.
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