| 发明名称 |
DUAL CURE B-STAGEABLE UNDERFILL FOR WAFER LEVEL |
| 摘要 |
<p>A silicon wafer has a B-stageable underfill material deposited on the active face of the wafer. The B-stageable underfill comprises a first composition with a lower curing temperature and a second composition with a higher curing temperature, characterized in that the first composition has been fully cured.</p> |
| 申请公布号 |
EP1461829(B1) |
申请公布日期 |
2008.01.09 |
| 申请号 |
EP20020805072 |
申请日期 |
2002.11.19 |
| 申请人 |
NATIONAL STARCH AND CHEMICAL INVESTMENT HOLDING CORPORATION |
发明人 |
MA, BODAN;LEHMANN, SUN-HEE;TONG, QUINN, K. |
| 分类号 |
H01L21/56;C08G59/18;H01L23/12;H01L23/29;H01L23/31 |
主分类号 |
H01L21/56 |
| 代理机构 |
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