METHOD OF FORMING A METAL WIRE IN A SEMICONDUCTOR DEVICE

摘要

A method of forming a metal wire in a semiconductor device is provided to generate TiSix forming an ohmic contact while TiN is formed on IMP-Ti by performing a rapid thermal treatment process. A method of forming a metal wire in a semiconductor device includes the steps of: forming an insulating film(102) having a trench structure on a semiconductor substrate(100); forming a second barrier metal film(108) by performing a rapid thermal treatment process after forming a first barrier metal film(106) on the entire structure; and forming a metal film(110) on the entire structure so as to bury a trench. IMP-Ti is well deposited in a top part and a bottom part of the trench, but the IMP-Ti is difficult to be deposited on a side surface of the trench. The second barrier metal film forms a titanium nitride film by reacting with an N2 gas serving as reaction gas and the first barrier metal film.