| 摘要 |
A method for manufacturing an image sensor is provided to enhance sensitivity by transmitting efficiently incident light to a photodiode region. An isolation layer region, a transistor region, and a photodiode region are defined on a semiconductor substrate(200). An isolation layer(210) is formed on the isolation layer region by etching the semiconductor substrate. A plurality of holes are formed at the photodiode region. A first conductive type ion implantation region(221) is formed by implanting first conductive type ions into the photodiode region. A second conductive type ion implantation region(223) is formed by implanting second conductive type ions into the first conductive type ion implantation region.
|
