| 摘要 |
A method of manufacturing an LCD is provided to reduce the number of masks used for forming a TFT(thin film transistor) by simultaneously performing n+ doping and storage doping and forming a source/drain electrode and a pixel electrode through one mask process. A first substrate divided into a pixel area and first and second circuit areas is provided. An active pattern(224') including a storage pattern(224") is formed in the pixel area, and an active pattern is formed in the circuit area. An n+ source/drain region is formed in a predetermined region of the active pattern in the pixel area and the first circuit area, and storage doping is performed on the storage pattern of the pixel area. A first insulating layer is formed on the first substrate. A gate electrode is formed in the pixel area and the circuit area, and a common line(208) is formed in the pixel area. A p+ source/drain region is formed in a predetermined region of the active pattern in the second circuit area. A second insulating layer is formed on the first substrate. A portion of the first and second insulating layers is removed to form a first contact hole(240a) and a second contact hole(240b) that expose the source region and the drain region of the active pattern. A source electrode(222) and a drain electrode(223), which are electrically connected with the source region and the drain region of the active pattern respectively through the first contact hole and the second contact hole, is formed, and a pixel electrode(218) that is connected with the drain electrode is formed. A second substrate is provided. A liquid crystal layer is formed on any one of the first and second substrates. The first substrate is attached to the second substrate. |
