| 摘要 |
A method for manufacturing metal lines of a semiconductor device is provided to improve the surface roughness of a wafer by forming a Ti-rich TiN layer before forming an Al metal layer. An interlayer dielectric(102) including a contact plug(104) is formed on a semiconductor substrate(100). A diffusion protection layer(106), a Ti-rich TiN layer(108), a metal layer, and an anti reflection coating(112) are sequentially formed on the resultant structure. The anti reflection coating, the metal layer, the Ti-rich TiN layer, and the diffusion protection layer are sequentially etched to form a metal line. The diffusion protection layer is formed by titanium(Ti) using a PVD(Physical Vapor Deposition) technique.
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