METHOD OF FORMING SEMICONDOUTOR DEVICE HAVING FIELD EFFECT TRANSISTOR

摘要

A method for forming a semiconductor device with a FET(field effect transistor) transistor is provided to minimize a leakage current between metal silicide and a semiconductor substrate by avoiding an excessive growth of metal silicide. A gate insulation layer(14) and a gate electrode(16) are sequentially stacked on a semiconductor substrate(10). A first insulation layer is formed on the resultant structure. A first etch-back process is performed on the first insulation layer until the upper surface and upper sidewall of the gate electrode are exposed, so that a first spacer(18a) with an exposed surface is formed. A second insulation layer is formed on the resultant structure. A second etch-back process is performed on the second insulation layer to form a second spacer(22a) covering the exposed surface of the first spacer. The process for performing the first etch-back process includes the following steps. A first anisotropic etch process is performed on the first insulation layer until the upper surface of the gate electrode is exposed. A second anisotropic etch process is performed on the firstly anisotropically etched first insulation layer until the upper sidewall of the gate electrode is exposed.