| 摘要 |
<p>A thermoacid generator for antireflection film formation, characterized by being represented by the following formula (1): [Chemical formula 1] (1) (wherein R1 represents C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); R2 represents linear, branched, or cyclic C1-20 alkyl, alkenyl, oxoalkyl, or oxoalkenyl, C 6-20 aryl, or C7-12 aralkyl or aryloxoalkyl; R 3 represents hydrogen or alkyl; and Y- represents a non-nucleophilic counter ion); a composition for forming an antireflection film; and an antireflection film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflection film can inhibit an overlying photoresist film from generating a scum.</p> |
