| 摘要 |
A method for manufacturing a bonded SOI(Silicon On Insulator) wafer is provided to shorten the length of an unbonded edge in the boned wafers in comparison with a conventional method, strengthen a bonding intensity, and obtain the bonded SOI wafer of a good quality. A method for manufacturing a bonded SOI wafer includes the steps of: bonding to face a second silicon wafer forming a first silicon wafer(42) and a first oxide film(46) during an interposition of the first oxide film; performing a heat treatment process to strengthen bonding force about the bonded wafers; filling an unbonded edge area with a second oxide film(48) performing a wet oxidation process about the wafers thermally treated; cutting an edge portion of the first silicon wafer at the unbonded edge area filled with the second oxide film; and thinning the first silicon wafer cut at the edge area. Further, N2 or Ar gas is used in the heat treatment process at 1200-1500°C for 100-150 mins.
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