| 摘要 |
<p>A method for evaluating semiconductor wafer dopant contamination is characterized in that a resistivity of a bulk section of a semiconductor wafer is measured by an eddy current method, a resistivity of a surface layer of the semiconductor wafer is measured by a surface photovoltage method, and a dopant contamination quantity of the semiconductor wafer is obtained from a difference between the resistivity value of a bulk section measured by the eddy current method and the resistivity value of the surface layer measured by the surface photovoltage method. Thus, the method for evaluating semiconductor wafer dopant contamination is provided for evaluating a dopant contamination quantity of the entire surface layer of the semiconductor in a noncontact and nondestructive manner and correctly.</p> |
