发明名称 |
Semiconductor component has substrate of conducting type and buried semiconductor layer of other conducting type is arranged on substrate and insulation structure has trench and electrically conducting contact to substrate |
摘要 |
<p>The component has a substrate (2) of conducting type and a buried semiconductor layer (3) of other conducting type is arranged on the substrate. The buried semiconductor layer is part of a semiconductor function unit. The insulation structure has a trench and an electrically conducting contact to the substrate. The electrically conducting contact to the substrate is insulated electrically from the functional unit semiconductor layer (4) and the buried layer by a trench. An independent claim is also included for the method for manufacturing of semiconductor components consists of a semiconductor body.</p> |
申请公布号 |
DE102006029701(A1) |
申请公布日期 |
2008.01.03 |
申请号 |
DE20061029701 |
申请日期 |
2006.06.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MEISER, ANDREAS;HARTNER, WALTER;GRUBER, HERMANN;BONART, DIETRICH;GROSS, THOMAS |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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