METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME

摘要

Disclosed is a production method which enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. Specifically, a large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at low temperatures by reacting carbon (C), which is produced from a lithium carbide such as dilithium acetylide (Li<SUB>2</SUB>C<SUB>2</SUB>), with silicon (Si) in an alkali metal melt, thereby producing or growing a silicon carbide (SiC) crystal. A high-resolution TEM (HR-TEM) image of the thus-obtained 2H-SiC crystal is shown in Fig. 17. As the lithium carbide, dilithium acetylide (Li<SUB>2</SUB>C<SUB>2</SUB>) is preferable. As the alkali metal melt, a melt of lithium by itself is preferable.