Method for setting a read voltage, and semiconductor circuit arrangement

摘要

A method for setting a read voltage that is used to read data from a nonvolatile memory is disclosed. Logic states from the first state set are stored in a particular number of digits in the multiplicity of memory areas. The memory areas are read in succession. The operation of reading one of the memory areas involves a number of reading steps for reading state information the read voltage being varied for each reading step and the state information that has been read being provided after each reading step. Control information based on the particular number of digits is provided. The state information that has been provided is compared with the control information. The read voltage to be set or a read voltage range to be set is determined on the basis of the results of the comparison.