| 摘要 |
<p>A method for extracting pattern information of a semiconductor device is provided to extract desired line or spacer pattern information by using an outline image of a defined pattern within a wafer. A loading process is performed to load layout pattern data of a semiconductor device and to load a wafer(S110). A pattern forming process is performed to form a pattern of the semiconductor device on the wafer by using the layout pattern data of the semiconductor device(S120). A separation process is performed to separate line and spacer information from the layout pattern data of the semiconductor device(S130). An extraction process is performed to extract an outline image of a defined pattern within the wafer(S140). An information extraction process is performed to extract desired pattern information by matching the outline image of the defined pattern within the wafer with a defined position of the layout pattern(S150,S160).</p> |
